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(R)
STPS24045TV
POWER SCHOTTKY RECTIFIER
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM VF (max) FEATURES AND BENEFITS
n n n n n
2 x 120 A 45 V 0.67 V
K2
A2
K1
A1
n
VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW THERMAL RESISTANCE INSULATED PACKAGE: Insulating voltage = 2500 V(RMS) Capacitance = 45pF AVALANCHE CAPABILITY SPECIFIED ISOTOPTM
DESCRIPTION Dual power Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in ISOTOP, this device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt *: Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature Critical rate of rise of reverse voltage
ISOTOP is a trademark of STMicroelectronics
Tc = 80C Per diode = 0.5 Per device tp = 10 ms Sinusoidal tp = 2 s F = 1kHz square tp = 100 s square tp = 1s Tj = 25C
Value 45 170 120 240 1500 2 10 43000 - 55 to + 150 150 10000
Unit V A A A A A W C C V/s
dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a )
1/4
July 2003 - Ed : 4A
STPS24045TV
THERMAL RESISTANCES Symbol Rth (j-c) Rth (c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C VR = VRRM Tj = 125C Tj = 25C IF = 240 A Tj = 125C IF = 240 A Tj = 125C IF = 120 A Min. Typ. Max. 2 300 0.91 0.87 0.67 Unit mA V Parameter Junction to case Per diode Total Coupling Value 0.65 0.28 0.10 Unit C/W
0.72 0.52
Pulse test :
* tp = 5 ms, < 2% ** tp = 380 s, < 2%
To evaluate the conduction losses use the following equation : P = 0.47 x IF(AV) + 0.00167 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode).
PF(av)(W) 110 100 90 80 70 60 50 40 30 20 10 0
= 0.5 = 0.2 = 0.1 = 0.05 =1
Fig. 2: Average forward current versus ambient temperature (= 0.5, per diode).
IF(av)(A) 140 120 100 80 60
Rth(j-a)=5C/W Rth(j-a)=2C/W Rth(j-a)=Rth(j-c)
T
=tp/T
tp
T
40
tp
IF(av) (A) 0 20 40 60 80 100
=tp/T
20
Tamb(C) 0 25 50 75 100 125 150
120
140
0
Fig. 3: Normalized avalanche power derating versus pulse duration.
PARM(tp) PARM(1s)
1
Fig. 4: Normalized avalanche power derating versus junction temperature.
PARM(tp) PARM(25C)
1.2 1
0.1
0.8 0.6
0.01
0.4 0.2
0.001
0.01 0.1 1
tp(s)
10 100 1000
Tj(C)
0 0 25 50 75 100 125 150
2/4
STPS24045TV
Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode).
IM(A) 800 700 600 500 400 300 200 100 0 1E-3
Tc=75C
IM t
Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration (per diode).
Zth(j-c)/Rth(j-c) 1.0 0.8
Tc=25C Tc=50C
0.6 0.4 0.2
= 0.5
= 0.2 = 0.1
T
=0.5
t(s) 1E-2 1E-1 1E+0
Single pulse
tp(s) 1E-2 1E-1
0.0 1E-3
=tp/T
tp
1E+0
5E+0
Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode).
IR(mA) 1E+2 1E+1 1E+0 1E-1 1E-2 VR(V) 1E-3 0 5 10 15 20 25 30 35 40 45
Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode).
C(nF) 50
Tj=125C Tj=100C Tj=75C Tj=50C
F=1MHz Tj=25C
10
Tj=25C
VR(V) 1 1 2 5 10 20 50
Fig. 9: Forward voltage drop versus forward current (maximum values, per diode).
IFM(A) 500
Tj=125C (Typical values)
100
Tj=25C
10
Tj=125C
VFM(V) 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
3/4
STPS24045TV
PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. 11.80 12.20 0.465 0.480 8.90 9.10 0.350 0.358 7.8 8.20 0.307 0.323 0.75 0.85 0.030 0.033 1.95 2.05 0.077 0.081 37.80 38.20 1.488 1.504 31.50 31.70 1.240 1.248 25.15 25.50 0.990 1.004 23.85 24.15 0.939 0.951 24.80 0.976 14.90 15.10 0.587 0.594 12.60 12.80 0.496 0.504 3.50 4.30 0.138 0.169 4.10 4.30 0.161 0.169 4.60 5.00 0.181 0.197 4.00 4.30 0.157 0.69 4.00 4.40 0.157 0.173 30.10 30.30 1.185 1.193
REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S
Type
Marking
Package ISOTOP
Weight 28 g. (without screws)
Base qty 10
Delivery mode Tube
STPS24045TV STPS24045TV
n n n
Cooling method: by conduction (C) Recommended torque value: 1.3 N.m Maximum torque value: 1.5 N.m
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4

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